Bandgap Renormalization In Monolayer Mos(2)On Cspbbr(3)Quantum Dots Via Charge Transfer At Room Temperature

Many-body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to intrinsic bandgap shrinking, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin-orbit splitting. This renormalization phenomenon has been commonly observed at low temperature and requires high photon excitation density. Here, the augmented bandgap renormalization (BGR) in monolayer MoS(2)anchored on CsPbBr(3)perovskite quantum dots at room temperature via charge transfer is presented. The amount of electrons significantly transferred from perovskite gives rise to the large plasma screening in MoS2. The bandgap in heterostructure is red-shifted by 84 meV with minimal pump fluence, the highest BGR in monolayer MoS(2)at room temperature, which saturates with a further increase of pump fluence. Further, it is found that the magnitude of BGR inversely relates to Thomas-Fermi screening length. This provides plenty of room to explore the BGR within existing vast libraries of large bandgap van der Waals heterostructure toward practical devices such as solar cells, photodetectors, and light-emitting-diodes.