Evaluation Of Radiation Hardness Of High-Voltage Silicon Vertical Jfets

In the future ATLAS Inner Tracker, each silicon strip module will be equipped with a switch able to separate the high voltage supply from the sensor in case the latter becomes faulty. The switch, placed in between the HV supply and the sensor, needs to sustain a high voltage in its OFF state, to offer a low resistance path for the sensor leakage current in the ON state, and be radiation hard up to 1.2 . 10(15)n(eq)/cm(2) along with other requirements. While GaN JFBTs have been selected as suitable rad-hard switch, a silicon vertical HV-JFBT was developed by Brookhaven National Laboratory as an alternative option. Pre-irradiation results showed the functionality of the device and proved that the silicon HV-JFBT satisfied the pre-irradiation requirements for the switch. To assess its suitability after irradiation, a few p-type HV-JFBTs have been neutron irradiated at Jozef Stefan Institute (JSI, Ljubljana, Slovenia). This paper reports the static characterization of these irradiated devices and the TCAD numerical simulations used to get an insight of the physics governing the post-irradiation behaviour.