Variability Sources In Nanoscale Bulk Finfets And Titan- A Promising Low Variability Wfm For 7/5nm Cmos Nodes

A systematic methodology to segregate different variability sources from electrical measurements, in sub-10nm W-fin FinFETs, is proposed. The threshold voltage variation, coming from gate-metal work-function and oxide charge variations, is shown to be the major contributor to in-wafer variability. The contribution of FER, GER and RDF to V-t variability is negligible. TiTaN, a new work function metal (WFM) for the metal gate-stack, is introduced and it provides similar to 37% less total and similar to 27% less random variability.