A High-Speed and High-Reliability TRNG Based on Analog RRAM for IoT Security Application

2019 IEEE International Electron Devices Meeting (IEDM)(2019)

引用 22|浏览40
暂无评分
摘要
A novel True Random Number Generator (TRNG) based on analog RRAM is developed. For the first time, the proposed TRNG harvests the variation of the pulse number in programming the analog states as the random source, and utilizes the parity of the pulse number to generate random bits. The TRNG throughput reaches >1 Mbit/sec for a single cell. The feasibility for chip-level parallel operation on multiple cells is verified experimentally to further improve the throughput. Excellent stability against temperature variation is also demonstrated. All the generated random bit streams pass the NIST tests across -40 to 125 °C. With an optimized small analog switching window, the endurance problem is significantly relieved as the functionality of TRNG is retained after 10 11 incremental switching cycles. Our high-speed and high-reliability TRNG design is compatible with the existing memory block and convenient for circuit implementation, making it suitable for future IoT applications.
更多
查看译文
关键词
random source,pulse number,TRNG throughput,single cell,chip-level parallel operation,multiple cells,temperature variation,generated random bit streams,optimized small analog switching window,high-reliability TRNG design,future IoT applications,analog RRAM,IoT security application,novel True Random Number Generator,analog states,temperature -40.0 degC to 125.0 degC
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要