Comparison of Different Precision Pseudo Resistor Realizations in the DC-Feedback of Capacitive Transimpedance Amplifiers

2019 26TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS)(2019)

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摘要
In this paper, three different pseudo resistor (PR) realizations are compared regarding their noise and linearity performance within the DC feedback loop of an integrator-differentiator transimpedance amplifier (I-D-TIA). Thanks to its intrinsic shot noise suppression, the multi-element pseudo resistor (MEPR) shows the best SNDR for small AC signals around a large DC current. In contrast, for large AC signals around comparably small DC currents, the transconductor based PR introduced by Ferrari et al. in [1] displays a rail-to-rail signal swing capability and a small THD of 0.4% resulting in the best achievable SNDR value. All simulations have been performed on transistor level in a 180 nm SOI CMOS technology with a 1.8 V supply.
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关键词
DC-feedback,capacitive transimpedance amplifiers,linearity performance,DC feedback loop,integrator-differentiator transimpedance amplifier,intrinsic shot noise suppression,multielement pseudoresistor,rail-to-rail signal swing capability,small DC currents,precision pseudoresistor realizations,I-D-TIA,MEPR,small AC signals,transconductor based PR,small THD,SOI CMOS technology,transistor level,size 180.0 nm,voltage 1.8 V
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