Comparison of Different Precision Pseudo Resistor Realizations in the DC-Feedback of Capacitive Transimpedance Amplifiers
2019 26TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS)(2019)
摘要
In this paper, three different pseudo resistor (PR) realizations are compared regarding their noise and linearity performance within the DC feedback loop of an integrator-differentiator transimpedance amplifier (I-D-TIA). Thanks to its intrinsic shot noise suppression, the multi-element pseudo resistor (MEPR) shows the best SNDR for small AC signals around a large DC current. In contrast, for large AC signals around comparably small DC currents, the transconductor based PR introduced by Ferrari et al. in [1] displays a rail-to-rail signal swing capability and a small THD of 0.4% resulting in the best achievable SNDR value. All simulations have been performed on transistor level in a 180 nm SOI CMOS technology with a 1.8 V supply.
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关键词
DC-feedback,capacitive transimpedance amplifiers,linearity performance,DC feedback loop,integrator-differentiator transimpedance amplifier,intrinsic shot noise suppression,multielement pseudoresistor,rail-to-rail signal swing capability,small DC currents,precision pseudoresistor realizations,I-D-TIA,MEPR,small AC signals,transconductor based PR,small THD,SOI CMOS technology,transistor level,size 180.0 nm,voltage 1.8 V
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