Ohmic contact formation mechanisms of TiN film on 4H–SiC

The atomic structure, interfacial charge distribution, bonding nature, and interfacial electronic states of a 4H–SiC/TiN interface are systematically investigated to understand the Ohmic contact formation mechanisms of TiN to 4H–SiC. The experiment results clearly demonstrate that the well-arranged TiN (111)-oriented lattice planes are parallel to the (0001) SiC-oriented substrate, which is in line with the XRD results. In addition, the interface is coherent without any secondary phase layers, amorphous layers, or transition regions, which confirms the direct contact of TiN to SiC at the atomic scale, exhibiting a linear current–voltage relationship. Quantitatively, first-principle calculations reveal that the Schottky barrier height (SBH) is as low as 0.03 eV and that the band gap nearly vanishes at the interface, indicating an excellent Ohmic contact of TiN to 4H–SiC. Furthermore, the SBH is significantly reduced through the interfacial charge polarization effect and strong coupling of interfacial electronic states, enhancing the quantum electron transport. The present results provide insight into the complicated electronic effects of the Ohmic contact interface and indicate that TiN is a promising SiC Ohmic contact material for advanced next-generation power device applications.