Molecular/Nanostructured Functional Metal Oxide Stacks For Nanoscale Nanosecond Information Storage

The metal oxide heterostructures market is exponentially growing, adhering to the trend of achieving fabrication versatility on a vast range of nonconventional electromagnetic and optical properties. A high degree of substrate tolerance and solution-phase growth potential promise low-cost flexible electronics and silicon-based process compatibility. A molecule-based complex oxide nanostructured stack integrated in an electro-optically operable nonvolatile two-terminal capacitive memory element is proposed. The cell demonstrates a remarkably high > 7 V memory window and write-read times down to 10 ns, promising for reliable high-speed storage. Molecular orbital occupancy through broadband optical stimulus enables simultaneous phononic addressing and boosts the written information amount by up to 37%, achieving 10+ years storage duration. The resulting nonvolatile memories are the first-documented complementary metal oxide semiconductor (CMOS)-compatible long-term-retention molecular capacitive cell of its kind, implementing inherent structure-emerging heat management. Great potential emerges for numerous energy-inspired innovations, enabling functional oxide-molecular hybrids exploitation as high-end nonvolatile memory products.