Dual metal Schottky barrier asymmetric gate stack cylindrical gate all around (DM-SB-ASMGS-CGAA) MOSFET for improved analog performance for high frequency application

In this paper dual metal Schottky barrier asymmetric gate stack cylindrical gate all around (DM-SB-ASMGS-CGAA) MOSFET is analyzed for improvement in analog performance for applications with high frequency, using ATLAS 3D device simulator. This device is compared with conventional Schottky barrier MOSFET (SB-CGAA), Schottky barrier graded stack MOSFET (SBGS-CGAA) and dual metal graded channel stack Schottky barrier MOSFET (DMSBGS-CGAA) to analyze its analog performance and applications. It is observed that DM-SB-ASMGS MOSFET shows better performance in terms of high drain current, high transconductance, gain obtained from current (CG) and gain obtained from maximum transducer power (MTPG). Early voltage and intrinsic gain are desirable for the proposed device compared to the other devices showing its capability for high-gain amplification applications. The potential and electric field results are better for the proposed device compared to the previous device architectures. The subthreshold slope obtained for DM-SB-ASMGS MOSFET is 67 (mV/decade) which is lowest among the other comparable devices and so it is highly desirable for high frequency applications. Small signal AC analysis is also carried out in order to affirm with the analog performance results. The scattering parameters (S-parameters) are taken in account and shows that it gives better performance compared to its counterparts. The reflection coefficients that are S 11 , S 22 show better matching to ports or minimum reflection. Also the parameters S 12 , S 21 show higher voltage gains implying that the device can be used for high gains.