Wafer-size VO2 film prepared by facile water-vapor assisted thermal oxidation of metallic vanadium film

The growth of wafer-scale and uniform monoclinic VO2 film with excellent phase transition property was a challenge if considering the multivalent nature of vanadium atom and the various phase structures of VO2 compound. Direct oxidation of metallic vanadium film by annealing in oxygen gas or in air was suggested to be an easy way for VO2 film preparation, while the oxidation parameters including the gas pressure, annealing temperature and time, were extremely sensitive due to the critical preparation window, since any parameter deviation would make the final product in a mess. Here we proposed a facile water-vapor assisted thermal oxidation of metallic vanadium film at ambience pressure and achieved a homogeneous single phase VO2 film with excellent MIT properties. Results indicated that by introducing the water vapor during the annealing process, the oxidation window was greatly broadened and the obtained monoclinic VO2 film showed the resistance change as large as 4 orders of magnitude, which was attributed to the improved crystallinity and the higher oxygen stoichiometry. The current wet oxidation route not only demonstrated that the common water vapor could be used as a modest oxidizing agent, but also showed the unique advantage for large size VO2 film preparation, which was meaningful for practical devices applications in the future.