Impact of Electron Injection and Temperature on Minority Carrier Transport in Alpha-Irradiated ß-Ga2O3 Schottky Rectifiers

The effect of electron injection on minority carrier transport in Si-doped beta-Ga2O3 Schottky rectifiers with 18 MeV alpha particle exposure (fluences of 10(12)-10(13) cm(-2)) was studied from room temperature to 120 degrees C. Electron Beam-Induced Current technique in-situ in Scanning Electron Microscope was used to find the diffusion length of holes as a function of duration of electron injection and temperature for alpha-particle irradiated rectifiers and compared with non-irradiated reference devices. The activation energy for electron injection-induced effect on diffusion length for the alpha-particle irradiated sample was determined to be similar to 49 meV as compared to similar to 74 meV for the reference sample. The decrease in activation energy of the electron injection effect on diffusion length for irradiated sample is attributed to radiation-induced generation of additional shallow recombination centers closer to the conduction band edge. (C) The Author(s) 2019. Published by ECS.