Fourier-Transformed Temperature-Dependent Photoluminescence of GaSb-Based Resonant Tunneling Structure with GaInAsSb Absorption Layer

The band structure of type-II resonant tunneling structures with a quaternary GaInAsSb absorption layer was studied by means of Fourier-transformed photoluminescence in the mid-infrared spectral region. The temperature-resolved measurement revealed a low-energy band with non-trivial photoluminescence spectra evolution. At low temperature the emission originating from the confined states within the type II GaSb/AlSb/InAs quantum well dominates the spectrum. The increase of temperature triggers the hole transfer from the GaSb quantum wells to the heavy hole band edge of the quaternary GaInAsSb material. The GaInAsSb-related emission line arises at 130 K and gains in intensity up to room temperature.