Influence Of Doping Concentration And Contact Geometry On The Performance Of Interdigitated Back-Contact Silicon Heterojunction Of Liquid Phase Crystalline Silicon On Glass

This work reports on the effect of doping concentration and contact geometry in interdigitated back-contact silicon heterojunction (IBC-SHJ) cell with liquid phase crystallized silicon (LPC-Si). Doping concentration of 3x10(16) cm(-3) and back surface field (BSF) finger width of 120 mu m at emitter width of 1080 mu m are demonstrated as optimized conditions to get the highest average cell efficiency. Spatially resolved methods such as light beam induced current (LBIC), photoluminescence (PL) and electroluminescence (EL) were used to investigate current losses. LBIC records showed that back-surface field (BSF) fingers were not well passivated and caused a loss of 2.6-2.7 mA/cm(2). Grain boundaries (GBs)/dislocations mainly contributed to a current loss of 3.6-4.0 mA/cm(2) corresponding to a relative loss of 11-12%.