Instant-On Spin Torque in Noncollinear Magnetic Tunnel Junctions
PHYSICAL REVIEW APPLIED(2018)
摘要
Through recent advances, the relevance of magnetic tunnel junctions (MTJs) to the microelectronics industry continues to rise. However, their reversal speed still suffers from incubation delay, a consequence of the collinear magnetization equilibrium states in perpendicularly magnetized MTJs (p-MTJs). We propose to tune the free layer in a Co-Fe-B/MgO/Co-Fe-B stack close to the reorientation transition, aiming to inducing a noncollinearity between the free layer and the reference layer to improve the magnetization reversal speed. Upon varying the layer thickness, the introduction of an in-plane magnetic component is observed in the free layer. Through time-resolved step-response measurements of the conductance, the dynamics are observed to consist of a stochastic delay followed by a repeatable magnetization-reversal pathway. We explore the separation of the measured response into these components and find the power requirements and switching speed to improve over the p-MTJ reference. This is a direct demonstration of the noncollinear improvement pathway, which is appealing for applications where the switching speed and a low energy cost of operation prevail over long-term stability.
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