Characterizing The Electrical Breakdown Properties Of Single N N-N(+):Gan Nanowires

The electrical transport properties and breakdown behaviors of single n-i-n-n(+) GaN nanowires (NWs) are investigated through in-situ nanoprobing inside a scanning electron microscope (SEM). The nanoprobing contact resistance is dramatically reduced by increasing the Si-doping concentration of the top n(+)-GaN segment of the NW. The dependence of the NW breakdown parameters (i.e., breakdown voltage, power, and current density) on the n(+)-GaN Si-doping concentration and the NW diameter is experimentally quantified and explained by the localized thermal decomposition mechanism of the NW. Enabled by the low NW-nanoprobe contact resistance, a breakdown current density of 4.65 MA/cm(2) and a breakdown power of 96.84 mW are achieved, both the highest among the previously reported results measured on GaN NWs. Published by AIP Publishing.