A Comprehensive Study of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Layer Effects on Negative Capacitance FETs for Sub-5 nm Node

Y. T. Tang,C. J. Su, Y. S. Wang,Kuo-Hsing Kao,T. L. Wu,P. J. Sung, F. J. Hou,C. J. Wang, M. S. Yeh,Y. J. Lee, W. F. Wu,G. W. Huang, J. M. Shieh,W. K. Yeh,Yeong-Her Wang

2018 IEEE Symposium on VLSI Technology（2018）

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摘要

The impact of a realistic representation of gate-oxide granularity on negative-capacitance (NC) FETs at sub-5nm node is studied by a newly developed thermodynamic energy model based on the first principle calculation (FPC). For the first time, the calculation fully couples the Landau-Khalatnikov (L-K) equation with grain-size effect equation in NC-FETs. It explains the experimental results in phase transition and reveals excellent immunity against depolarization in ferroelectric (FE) layer owing to dopant concentration and stress in thin films. A sub-5nm node (LG=10nm) NC-FET with thin FE layer (T _FE ~2nm) is integrated to achieve low subthreshold slope (SS) of 52mV/dec via a 1.9GPa-tensor stressed interfacial layer (IL) and 12% Zr-doped HfO ₂ .

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关键词

first principle calculation,depolarization,Landau-Khalatnikov equation,thin FE layer,dopant concentration,ferroelectric layer,phase transition,NC-FETs,grain-size effect equation,thermodynamic energy model,negative-capacitance FETs,gate-oxide granularity,interfacial layer effects,ferroelectric-dielectrics,polymorphic phase distribution,voltage 52.0 mV,size 5.0 nm,size 10.0 nm,pressure 1.9 GPa,HfO2:Zr

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