High Performance Mobile Soc Productization With Second-Generation 10-Nm Finfet Technology And Extension To 8-Nm Scaling

We report on Snapdragon T SDM845 mobile SoC in mass production with a second-generation 10-nm finFET technology. SDM845 exhibits 30-40% CPU/GPU performance gain over SDM835 (first-generation 10-nm finFET process) together with similar to 10% battery life increase driven by new design features and technology improvements in both transistor performance and uniformity, enabling high performance and low power solution for both mobile and computing/AI applications. Extending the technology scaling further, similar to 15% logic circuit area scaling over 10 nm has been realized in an 8-nm node with gate and BEOL pitch scaling enabled by quadruple patterning (LE<^> 4). Yield equivalence to 10 nm has been demonstrated in 8-nm IP chips.