Spin-Flip Processes And Radiative Decay Of Dark Intravalley Excitons In Transition Metal Dichalcogenide Monolayers (Vol 3, 035009, 2016)

2D MATERIALS(2019)

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摘要
We perform a theoretical study of radiative decay of dark intravalley excitons in transition metal dichalcogenide monolayers. This decay necessarily involves an electronic spin flip. The intrinsic decay mechanism due to interband spin-flip dipole moment perpendicular to the monolayer plane, gives a rate about 100-1000 times smaller than that of bright excitons. However, we find that this mechanism also introduces an energy splitting due to a local field effect, and the whole oscillator strength is contained in the higher-energy component, while the lowest-energy state remains dark and needs an extrinsic spin-flip mechanism for the decay. Rashba effect due to a perpendicular electric field or a dielectric substrate, gives a negligible radiative decay rate (about 10 7 times slower than that of bright excitons). Spin flip due to Zeeman effect in a sufficiently strong in-plane magnetic field can give a decay rate comparable to that due to the intrinsic interband spin-flip dipole.
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transition metal dichalcogenide monolayers, electronic and optical properties, decay rate of dark excitons
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