Low-temperature solution-processed zinc oxide field effect transistor by blending zinc hydroxide and zinc oxide nanoparticle in aqueous solutions

We present a novel methods of fabricating low-temperature (180 degrees C), solution-processed zinc oxide (ZnO) transistors using a ZnO precursor that is blended with zinc hydroxide [Zn(OH)(2)] and zinc oxide hydrate (ZnO center dot H2O) in an ammonium solution. By using the proposed method, we successfully improved the electrical performance of the transistor in terms of the mobility (mu), on/off current ratio (I-on/I-off), sub-threshold swing (SS), and operational stability. Our new approach to forming a ZnO film was systematically compared with previously proposed methods. An atomic forced microscopic (AFM) image and an X-ray photoelectron spectroscopy (XPS) analysis showed that our method increases the ZnO crystallite size with less OH- impurities. Thus, we attribute the improved electrical performance to the better ZnO film formation using the blending methods. (C) 2018 The Japan Society of Applied Physics