Vo2 Film Temperature Dynamics At Low-Frequency Current Self-Oscillations

Low-frequency (similar to 2 Hz) current self-oscillations were first obtained in a millimeter-sized two-terminal planar device with a vanadium dioxide (VO2) film. The film temperature distribution dynamics was investigated within one oscillation period. It was established that the formation and disappearance of a conductive channel occur in a film in less than 60 ms with oscillation period 560 ms. The experimentally observed temperature in the channel region reached 413 K, being understated due to a low infrared microscope performance (integration time 10 ms). The VO2 film temperature distribution dynamics was simulated by solving a 2D problem of the electric current flow and heat transfer in the film. The calculation showed that the thermally initiated resistance switching in the film occurs in less than 4ms at a channel temperature reaching similar to 1000 K. The experimental results and simulation are consistent with the current self-oscillation mechanism based on the current pinching and dielectric relaxation in the VO2 film at the metal-insulator phase transition. Published by AIP Publishing.