Effect of oxygen pressure on the semiconductor properties of FTO thin films

In this paper, the Optical and Semiconductor properties of epitaxial thin films of Fe 2−x Ti x O 3-δ , deposited on SrTiO 3 (001) by pulsed laser deposition (PLD) are studied. We use Perlin Elmer 9500 spechtrophotometer in order to measure the optical transmission and reflection. The prepared films using oxygen pressure PO2 above 3 ∗ 10 ⁻⁷ Torr, presents a R(3) symmetry structure. The prepared samples present a deficiency δ = 0.35. The optical properties show a very important dependence with the oxygen cation stoichiometry. These last properties, which are dominated by the oxygen deficiency obtained during the growth of thin films, show a semiconductor behavior where the conductivity increase more with S than by the atomic ordering of titanium.