Device and circuit optimization of RRAM for neuromorphic computing

2017 IEEE International Electron Devices Meeting (IEDM)(2017)

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摘要
RRAM is a promising electrical synaptic device for efficient neuromorphic computing. A human face recognition task was demonstrated on a 1k-bit 1T1R array using an online training perceptron network. The RRAM device structure and materials stack were optimized to achieve reliable bidirectional analog switching behavior. A binarized-hidden-layer (BHL) circuit architecture is proposed to minimize the needs of A/D and D/A converters between RRAM crossbars. Several RRAM non-ideal characteristics were carefully evaluated for handwritten digits' recognition task with proposed BHL architecture and modified neural network algorithm.
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关键词
materials stack,reliable bidirectional analog switching behavior,binarized-hidden-layer circuit architecture,RRAM crossbars,RRAM nonideal characteristics,handwritten digits,circuit optimization,human face recognition task,online training perceptron network,neuromorphic computing,BHL architecture,electrical synaptic device,1T1R array,D/A converters,A/D converters,word length 1000 bit
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