Extraction Of Migration Energies And Role Of Implant Damage On Thermal Stability Of Deuterium In Ga2o3

Deuterium was incorporated in bulk single crystal beta-Ga2O3 samples by either ion implantation (100 keV, 10(15) cm(-2)) or plasma exposure (up to 270 degrees C, 30 mins) of single-crystal beta-Ga2O3 and then its stability was examined as a function of annealing temperature. The mechanisms in both cases were extracted by fitting the experimental depth profiles using models within the Florida Object Oriented Process Simulator (FLOOPS) code. In the case of incorporation by implantation, annealing causes the deuterium to migrate toward the surface with simultaneous trapping at the residual implant damage. In the case of plasma incorporation where there is no residual damage, annealing causes outgassing of the deuterium from the surface, mediated through molecule formation. Very good fits to the experimental data are achieved by integrating physics of the outdiffusion mechanisms into the FLOOPS code. The rate constants and diffusivities used for the simulation were found to follow an Arrhenius dependence, with an activation energy for outdiffusion of deuterium of 1.22 eV and 2.58 eV for the release rate of deuterium from trap sites in the implanted case. (c) 2017 The Electrochemical Society. All rights reserved.