How to build a Generic Model of complete ICs for system ESD and electrical stress simulation?

2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)(2017)

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摘要
For precise system ESD simulation the transient chip behavior needs to be modeled accurately. As there are several typical characteristics possible (e.g. diode breakdown, snapback-element or forward diode) a straight forward methodology to build a generic model for transient behavior with destruction limits in SPICE is presented. This enables full-system transient ESD and electrical stress simulation for system robustness evaluation.
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关键词
electrical stress simulation,transient chip behavior,ESD system simulation,SPICE
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