Design Of High-Gain, Low-Power Amplifier For Mems Acceleration Sensor Readout Circuit

2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)(2016)

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摘要
This paper presents a high-gain, low-power amplifier based on cascade structure and clock-control technique for MEMS acceleration sensor readout circuit. By controlling the clock signal, the amplifier has a superior performance. With +/- 5 V power supply, using the 0.5 um CMOS process technology, the Cadence simulation shows that, the total gain is about 167 dB with the unity gain bandwidth of 2.63 MHz. The power consumption of the amplifier is only 127.5 uW, which significantly reduces the whole power of the circuit.
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关键词
MEMS acceleration sensor readout circuit,low-power amplifier,high-gain amplifier,cascade structure,clock-control technique,clock signal,CMOS process technology,Cadence simulation,voltage 5 V,voltage -5 V,bandwidth 2.63 MHz,power 127.5 muW
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