A Reram-Based Single-Nvm Nonvolatile Flip-Flop With Reduced Stress-Time And Write-Power Against Wide Distribution In Write-Time By Using Self Write-Termination Scheme For Nonvolatile Processors In Iot Era

2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)(2016)

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摘要
Recent nonvolatile flip-flops (nvFFs) enable the parallel movement of data locally between flip-flops (FFs) and nonvolatile memory (NVM) devices for faster system power off/on operations. The wide distribution and long period in NVM-write times of previous two-NVM-based nvFFs result in excessive store energy (E-s) and over-write induced reliability degradation for NVM-write operations. This work proposes an nvFF using a single NVM (1R) with self-write-termination (SWT), capable of reducing Es by 27+x and avoid over-write operations. In fabricated 65nm ReRAM nvProcessor testchips, the proposed SWT1R nvFFs achieved off/on operations with a 99% reduction in E-s and 2.7ns SWT latency (T-swT). For the first time, an nvFF with single NVM device is presented.
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关键词
ReRAM-based single-NVM Nonvolatile Flip-Flop,stress-time,write-power,nonvolatile processors,IoT,parallel data movement,nonvolatile memory,NVM-write times,over-write induced reliability degradation,nvFF,self-write-termination,ReRAM nvProcessor testchips,SWT1R nvFF,SWT latency reduction,size 65 nm
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