Energy Yield Potential Of Perovskite-Silicon Tandem Devices

Metal-halide perovskite photovoltaic devices have recently become of great interest to the research community with efficiencies of the thin film devices already reported to exceed a single junction cell efficiency of 20%. Of particular interest with this type of device is its potential to be integrated with the well established silicon photovoltaic technology into a monolithic tandem device with the potential to deliver efficiencies of greater than 30%. In such devices the most attractive prospect is to monolithically integrate the perovskite and silicon materials into a planar single device for ease of deposition and device construction. Such a series connected device comes with inherent current matching restrictions on the operating performance of the individual junctions when working in tandem. These restrictions significantly complicate the calculation of potential energy yield for such a tandem device due to the impact of spectrum, angle of incidence and temperature. We model the performance of a tandem device using experimentally determined performance characteristics combined with representative resource and environment datasets to evaluate the energy yield potential of perovskite-silicon tandem under outdoor conditions. We observe that the largest impact is caused by the spectral irradiance distribution (7.6%) followed by angle of incidence (2.7%) and temperature response differential (0.7%). Our modelling indicates that these combine to alter the energy yield for a tandem device by 4.5%.