Performance Degradation Of Superlattice Mosfets Due To Scattering In The Contacts

Ideal, completely coherent quantum transport calculations had predicted that superlattice MOSFETs (SL-MOSFET) may offer steep subthreshold swing performance below 60 mV/dec to around 39 mV/dec. However, the high carrier density in the superlattice source suggests that scattering may significantly degrade the ideal device performance. Such effects of electron scattering and decoherence in the contacts of SL-MOSFETs are examined through a multi-scale quantum transport model developed in NEMO5. This model couples the NEGF-based quantum ballistic transport in the channel to a quantum mechanical density of states dominated reservoir, which is thermalized through strong scattering with local quasi-Fermi levels determined by drift-diffusion transport. The simulations show that scattering increases the electron transmission in the nominally forbidden minigap, therefore, degrading the subthreshold swing (S.S.) and the ON/OFF DC current ratio. This degradation varies with both the scattering rate and the length of the scattering dominated regions. Different SL-MOSFET designs are explored to mitigate the effects of such deleterious scattering. Specifically, shortening the spacer region between the superlattice and the channel from 3.5 nm to 0 nm improves the simulated S. S. from 51 mV/dec. to 40 mV/dec. Published by AIP Publishing.