Optoelectronic Mixing On Cvd Graphene Up To 30 Gigahertz: Analysis At High Electrostatic Doping
CARBON NANOTUBES, GRAPHENE, AND EMERGING 2D MATERIALS FOR ELECTRONIC AND PHOTONIC DEVICES IX(2016)
摘要
Due to its remarkable properties, graphene-based devices are particularly promising for optoelectronic applications. Thanks to its compatibility with standard silicon technology, graphene could compete III-V compounds for the development of low cost and high-frequency optoelectronic devices. We present a new optoelectronic device that consists in a coplanar waveguide integrating a commercially-available CVD graphene active channel. With this structure, we demonstrate high-frequency (30 GHz) broadband optoelectronic mixing in graphene, by measuring the response of the device to an optical intensity-modulated excitation and an electrical excitation at the same time. These features are particularly promising for RADAR and LIDAR applications, as well as for low-cost high-speed communication systems.
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关键词
Optoelectronic mixing, graphene, graphene optoelectronics, microwave photonics, high frequency graphene devices, graphene photonics, graphene electronics, graphene photodetector
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