Performance improvement of organic thin film transistors with carbon nanotube/metal hybrid electrodes for S/D contacts

Electrode contact resistance is an important factor that seriously affects the performance of organic thin film transistors (OTFTs). In this paper, new low contact resistance carbon nanotube (CNT) based hybrid electrodes are introduced for the source and drain electrodes of OTFTs. The hybrid electrodes consist of solution-processed CNTs and a metal (Al; CNT/Al or Au; CNT/Au) layer evaporated on the CNTs. The contact resistance of the CNT/Al and CNT/Au hybrid electrodes was found to vary depending on the thickness of the Al and Au layer. The contact resistance of the CNT/Al hybrid electrodes exhibited a minimum of 2.9 kΩ cm at an Al thickness of 5 nm. It is notable that the minimum contact resistance of the CNT/Au was 0.9 kΩ cm at an Au thickness of 5 nm, and is the lowest value ever reported. It was lower than the 13 kΩ cm of the bare CNT electrodes, and tremendously less than the 4 MΩ cm of the pure Au electrode. The mobility of the OTFTs, which used pentacene as the semiconductor and polyvinylphenol as the gate dielectric, also followed the same dependence on metal thickness as the contact resistance. The maximum mobility of the OTFTs using CNT/Al and CNT/Au electrodes was 0.76 cm2/V sec and 1.0 cm2/V sec, respectively, at the same metal thickness of 5 nm, which was larger than 0.3 cm2/V sec of the bare CNT electrodes. The major origin of these enhancements was found to be the small energy difference between the work function of the CNT/metal hybrid electrodes and pentacene HOMO (5.1 eV), which was obtained at the metal thickness of 5 nm.