Growth Mode Transition in Complex Oxide Heteroepitaxy: Atomically Resolved Studies

CRYSTAL GROWTH & DESIGN(2016)

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摘要
We performed investigations of the atomic-scale surface structure of epitaxial La5/8Ca3/8MnO3 thin films as a model system dependent on growth conditions in pulsed laser deposition with emphasis on film growth kinetics. Postdeposition in situ scanning tunneling microscopy was combined with in operando reflective high-energy electron diffraction to monitor the film growth and ex situ. X-ray diffraction for structural analysis. We find a correlation between the out-of-plane lattice parameter and both adspecies mobility and height of the Ehrlich Schwoebel barrier, with mobility of adatoms greater over the cationically stoichiometric terminations. The data suggest that the out-of-plane lattice parameter is dependent on the mechanism of epitaxial strain relaxation, which is controlled by the oxidative power of the deposition environment.
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关键词
complex oxide heteroepitaxy,growth
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