Polysilicon nanowire NEMS fabricated at low temperature for above IC NEMS mass sensing applications

I. Ouerghi,M. Sansa, W. Ludurczak,L. Duraffourg, K. Benedetto,P. Besombes, T. Moffitt, B. Adams, D. Larmagnac,P. Gergaud,C. Poulain,A. I. Vidaña, C. Ladner, J. M. Fabbri, D. Muyard,G. Rodriguez, G. Rabille, O. Pollet,P. Brianceau,S. Kerdiles,S. Hentz,T. Ernst

2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2015）

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摘要

In this work, we demonstrate for the first time the performance of polysilicon (poly-Si) NEMS fabricated with a low temperature process compatible with a NEMS above IC 3D integration. Most important figures of merit feature values still competitive in comparison to mono-crystalline (c-Si) NEMS: Allan deviation, quality factor (Q), Signal-to-Background ratio (SBR), Dynamic Range (DR), yield and variability, piezoresistive and elastic properties. We found the best process window (laser annealing conditions and dopant concentration) to optimize poly-Si NEMS with excellent features compared to conventional c-Si NEMS. The goal of this study is to replace c-Si for low cost 3D integration.

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关键词

polysilicon nanowire NEMS,IC NEMS mass sensing applications,low temperature process,Allan deviation,quality factor,signal-to-background ratio,dynamic range,piezoresistive properties,elastic properties,laser annealing,dopant concentration,Si

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