Design and Optimization of SiC Super-Junction MOSFET Using Vertical Variation Doping Profile
IEEE Transactions on Electron Devices(2019)
摘要
In this paper, uniformly doped drift region of silicon carbide (SiC) super-junction (SJ) MOSFET is replaced with vertical variable doping profile (VVD) to achieve a better tradeoff between breakdown voltage (BV) and specific ON-resistance (
${R}_{\text {sp,on}}$
). While it is known that the SJ device consists of two vertical columns of n- and p-type, SJ VVD feature lies in increasing the doping concentration from top to bottom in the N-column and vice-versa in the P-column within the drift region. The proposed SJ VVD allows
$\text {R}_{{\text {sp, on}}}$
to reduce further due to increased average doping concentration in conducting N-column and BV to increase further due to shifting of an electric field from corners to the center of the drift region. BV and
${R}_{\text {sp,on}}$
improved by 10% in an SJ VVD MOSFET and these parameters follow linear relationship similar to SJ MOSFET. The 2-D numerical simulations from Synopsys TCAD are used for investigating the static and dynamic characteristics of the device. In addition to 30% improvement in Baliga figure of merit, 35% improvement is obtained over SJ MOSFET in turn on and turn off switching energies for a clamped inductive circuit at 1200 V–20 A. Improved dynamic characteristics of SJ VVD can be attributed to reduction in gate charge (
${Q}_{g}$
) and miller capacitance (
${c}_{\text {rss}}$
) compared to SJ MOSFET.
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关键词
MOSFET,Silicon carbide,Doping,Semiconductor process modeling,Mathematical model,Semiconductor device modeling,Computational modeling
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