A comparative study of the emitter formation of a c-si solar cell using gas and spin on dopant sources

In this work, a comparative study for the n-type emitter formation in the fabrication of simple structures of crystalline silicon (c-Si) solar cells is reported. Gas and spin on dopant sources were employed in the pn junction formation of the solar cells in order to compare their performance. Phosphine (PH ₃ ) was used as n-type gas for phosphorus diffusion while the Filmtronics Spin-On Dopant SOD-P905 was used as n-type liquid source. From the results, we observed that there was a small discrepancy in the open circuit voltage, short circuit current and fill factor of the two processes, with similar efficiency. These results suggest that SOD-P905 can be used to produce low-cost silicon solar cells. Also in order to improve the efficiency of the SOD solar cells, a wet surface texturization stage was incorporated in the fabrication process.