A Radiation-Hardened Trench Power Mosfet For Aerospace Applications

Power MOSFETs are important satellite components. In this paper, a radiation-hardened trench power MOSFET is designed. In order to meet the requirements of aerospace uses, anti-total-dose radiation effect performance is improved by changing the process sequences, gate oxide growing at low temperature and controlling the growth atmosphere strictly; Anti-single-event effect performance is improved by increasing the injection dose of the P-type base region, reducing the doping concentration of the source region and shortening the trench width. The radiation-hardened trench power MOSFET is fabricated using a 0.3-mu m-line-width trench power MOSFET process with a chip area of 2.09 mm x 2.79 mm. The drain-to-source breakdown voltage is 41V, drain-to-source on-state resistance is 6mO, and gate threshold voltage drift is -0.9V after a total ionizing dose of 100-krad (Si). The measured single-event burnout and single-event gate rupture threshold is above 94.6 MeV/(mg/cm(2)) at a gate-to-source voltage of -5V and drain-to-source voltage of 30V.