Study of Three-Dimensional Small Chip Stacking Using Low Cost Wafer-Level Micro-bump/B-Stage Adhesive Film Hybrid Bonding and Via-Last TSVs

Three-dimensional (3-D) small chip stacking using low cost wafer-level insert-bump hybrid bonding and via-last TSVs is proposed and investigated. The proposed hybrid bonding method realized by micro Cu pillar solder bumps and photo-patternable B-stage adhesive film has been successfully applied to an 8 inch wafer with 86 255 gross dies and a bump pitch of 150 μ m. The complete process flow is successfully validated and a well electrical connectivity for the whole wafer is obtained. Two hybrid bonding approaches, i.e., “adhesive-first” hybrid bonding and “Cu pillar bump-first” hybrid bonding, are studied. A void-free hybrid bonding interface with a final gap between top chip and bottom chip lower than 30 μ m is achieved using the “Cu pillar bump-first” hybrid bonding approach. The interaction of SnAg solder with electroless Ni-P/immersion Au and electro Ni are investigated. Two types of interfacial compounds, i.e., Ni 3 Sn 4 and P-rich Ni layer containing Sn atoms, are found. The via-last through silicon vias (TSVs) have a diameter of 40 μ m and a depth of 95 μ m. The results indicate that it is a promising method for 3-D integrated circuits stacking technology using hybrid bonding and via-last TSVs.