Electronic Properties of Transferable Atomically Thin MoSe 2 /h-BN Heterostructures Grown on Rh(111).

Vertically stacked two-dimensional (2D) heterostructures composed of 2D semiconductors have attracted great attention. Most of these include hexagonal boron nitride (h-BN) as either a substrate, encapsulant or a tunnel barrier. However, a reliable synthesis route towards large-area and epitaxial 2D heterostructures incorporating BN remains challenging. Here, we demonstrate the epitaxial growth of nominal monolayer MoSe2 on h-BN/Rh(111) by molecular beam epitaxy (MBE), where the h-BN nanomesh superstructure decouples to form an uncorrelated, atomically smooth interface. The valence band structure of ML MoSe2/h-BN/Rh(111) revealed by photoemission electron momentum microscopy (kPEEM) shows that the valence band maximum (VBM) located at K point is below the Fermi level (EF) by energy of 1.33 eV, and the energy difference between K point and Γ point is determined to be 0.23 eV, demonstrating that the electronic properties such as direct bandgap feature and effective mass of ML MoSe2 are well preserved in MoSe2/h-BN heterostructures.