A 16gb/S/Pin 8gb Gddr6 Dram With Bandwidth Extension Techniques For High-Speed Applications

Recently the demand for high-bandwidth graphic DRAM, for game consoles and graphic cards, has dramatically increased due to the development of virtual reality, artificial intelligence, deep learning, autonomous driving cars, etc. These applications require greater data transfer speeds than pervious devices, GDDR5 [1] and GDDR5X [2], which are limited to 12Gb/s/pin. This paper introduces an 8Gb GDDR6 operating at up to 16Gb/s/pin. To exceed the prior speed limit various bandwidth extension techniques are proposed. WCK is driven with a dividing scheme to overcome speed limitations and to reduce power consumption. In addition, a dual-band architecture with different types of nibble drivers is proposed in order to cover stability of CML-to-CMOS in all frequency regions; CML nibble is used for high-speed, while CMOS nibble is used for low-speed. A DC-split scheme is implemented for duty-cycle correction and skew compensation. The bandwidth of the high-frequency divider is extended by using a proposed mode-changed flip-flop. The receiver uses a loop-unrolled one-tap decision-feedback equalizer (DFE) designed to eliminate channel inter-symbol interference (ISI). A two-stage pre-amplifier is also used for bandwidth extension. The transmitter uses a 4:1 multiplexer using a half-rate sampler, where a 1UI pulse is unnecessary to minimize the full-rate operation. To secure on-chip signal transmission characteristic, the bandwidth limitation of transistor in a DRAM process is extended by adopting an on-chip feedback EQ filter.