Process development of a new TGV interposer for wafer level package of inertial MEMS device

In this paper, a TGV interposer based wafer level packaging for inertial MEMS devices is presented. For the TGV interposer, there is a redistribution layer of Al wiring on each side, which are electrically connected with Al metalized TGV. Being as a capping wafer, it's bonded to a MEMS accelerometer wafer based on bulk silicon process with a patterned benzocyclobutene(BCB) layer to achieve wafer level package. To verify the process, TGV interposer is fabricated and experiment results prove that Al TGV interconnection is electrically conductive. TGV interposer capped MEMS accelerometer is demonstrated and the tested shear bonding strength is about 69.84N with two concentric rectangular rings made of BCB adhesives, where the inner ring is about 6300μm _ 5000μm with a width of 200μm and the outer ring is about 680μm _ 5500μm with a width of 150μm. © 2016 IEEE.