Process development of thick Si interposer for 2.5D integration of RF MEMS devices

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)(2016)

引用 0|浏览26
暂无评分
摘要
In this paper, a thick TSV interposer with integrated inductor, micro-strip and coplanar waveguides(CPW) transmission lines on high resistivity Si substrate is presented for 2.5 D integration of RF devices. The electrical interconnection through Si interposer is realized by two individual pieces of holly Cu TSVs of different diameters assembled at the axis. Metallization is realized with a redistribution layer of Cu on the each side. The process is developed to fabricate TSV interposer on thick high resistivity Si wafer. It's featuring in no need of Cu CMP process. Thick Si interposer sample integrated passives such as inductor, CPW transmission line and micro-strip transmission line is fabricated on high resistivity Si substrate.
更多
查看译文
关键词
Thick TSV interposer,high resistivity Si,CPW,Micro-strip,inductor
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要