Surface properties from transconductance in nanoscale systems.

Because of the continued scaling of transistor dimensions and incorporation of nanostructured materials into modern electronic and optoelectronic devices, surfates and interfaces have beconie a dominant factor dictating material properties and device performance. In this study, we investigate the temperature-dependent electronic transport:properties of InAs nanowire field-effect transistors. A point where the nanowire conductance becomes independent of temperature is observed, known as the zero-temperature-coefficient. The distribution of surface states is determined by a spectral analysis of the conductance activation energy and used to develop a carrier transport model that explains the existence and gate voltage dependence of this point. We determine that the position of this point in gate voltage is directly related to the fixed oxide charge on the nanowire surface and demonstrate the utility of this method for studying surface passivations in nanoscale systems by characterizing (NH4)(2)S-x and H-2 plasma surface treatments on InAs nanowires.