Bending and buckling of narrow armchair graphene nanoribbons via STM manipulation

Semiconducting graphene nanoribbons (GNRs) are envisioned to play an important role in future electronics. This requires the GNRs to be placed on a surface where they may become strained. Theory predicts that axial strain, i.e. in-plane bending of the GNR, will cause a change in the band gap of the GNR. This may negatively affect device performance. Using the tip of a scanning tunneling microscope we controllably bent and buckled atomically well-defined narrow armchairGNRand subsequently probed the changes in the local density of states. These experiments show that the band gap of 7-ac-GNR is very robust to in-plane bending and out-of-plane buckling.