Development of a Semiconducior Neutron Dosimeter with a PIN Diode

When a Si PIN diode is exposed to fast neutrons,it produces displacement in Si lat1ice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward vo1tage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron efl:i?cton the serniconductor was analyzed,a nd multi PIN diode arrays with various intrinsic layer(Ilayer)thicknesses and cross sections were fabricated. Under irradation tests with a neutron beam,the manufactured diodes have good characteristics of linearity in an eutron irradiation experiment and give results that the increase of thickness of 1 layer and the decrease of the cross-section of the PIN diodes improve the sensitivity. Newly developed PIN diodes with a?rickerI layer and various cross sections were ret...