A Performance and an Imaging Result of Silicon Strip Detector
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY(2008)
摘要
Since capacitively coupled readout has an advantage of shielding the readout electronics from sensor leakage current, we fabricated an AC-coupled single-sided silicon strip sensor on 5-in. 380 mu m-thick wafer and its active area is 3.2 x 3.2 cm(2). It has 64 implanted and readout strips with a strip pitch of 500 mu m. Two silicon strip sensors were mounted perpendicularly one another to get two-dimensional position information with a 5 mm space gap. Two low noise analog ASICs, VA 1 chips, were used for signal readout of the strip sensor. The single-sided silicon strip detector (SSSD) consists of the two AC-coupled single-sided strip sensors and readout electronics. The SSSD was housed in an Al light-tight box. A CsI(Tl) scintillation crystal and a 2-in. photomultiplier tube were used to trigger signal events. The data acquisition systems were based on a 64 MHz FADC and control softwares for the PC-Linux platform. Experiments were performed at room temperature and silicon sensors were fully depleted. The SNRs were measured to be 29.1 +/- 2.2 and 26.4 +/- 0.3, respectively, for a 45 MeV proton beam and a Sr-90 radioactive source. Imaging tests were performed using a Pb phantom with a Sr-90 radioactive source and a 45 MeV proton beam, respectively. From the two-dimensional hit distribution, the phantom images were obtained and the position resolution was estimated to be about 240 mu m.
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关键词
silicon strip detector,proton imaging,phantom image,signal-to-noise ratio,cyclotron
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