Improvement Of Temperature Stability In Columnar Quantum Dots By Introducing Side Barriers With Larger Bandgap Energy For Semiconductor Optical Amplifiers
QUANTUM DOTS AND NANOSTRUCTURES: SYNTHESIS, CHARACTERIZATION, AND MODELING IX(2012)
摘要
We have investigated the temperature dependence of InAs columnar quantum dots (CQDs) surrounded by InGaAsP barriers with different bandgap energies toward high-temperature performance for semiconductor optical amplifiers. It was found that larger bandgap energy in InGaAsP side barriers enabled to increase the quasi-Fermi level (F) separation between the conduction and valence bands from theory. We have fabricated two types of CQD-SOAs with different side barrier energies and compared temperature characteristics. Decrease in the material gains for CQD with a larger side barrier bandgap was suppressed by 20% with increasing temperature from 25 degrees C to 85 degrees C.
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关键词
Quantum dot, Semiconductor optical amplifier, temperature stability
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