SiGe HBT modeling for mm-wave circuit design
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM(2015)
摘要
An overview on the compact modeling activities within the DOTSEVEN project is given. Issues such as geometry scaling, substrate coupling and thermal effects as well as HICUM Level 2 features enabling the accurate modeling of the linear and non-linear characteristics of the latest generation of SiGe HBTs are discussed. Furthermore, experimental results for the most important DC and small-signal characteristics as well as selected examples for non-linear modeling of the most advanced SiGe HBTs from two different technologies are presented. Model verification issues related to limited on-wafer high-frequency measurement capability and the accurate calibration at multi-hundred GHz are briefly touched.
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关键词
calibration,on-wafer high-frequency measurement capability,nonlinear HBT modeling,DC characteristics,small-signal characteristics,HICUM level 2 effect,thermal effect,substrate coupling,geometry scaling,DOTSEVEN project,mmwave circuit design,SiGe
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