Modeling and Simulation of Poly-Space Effects in Uniaxially-Strained Etch Stop Layer Stressors

Lixin Ge,Vance Adams,Konstantin V Loiko,D Tekleab,Xiangzheng Bo,Mark C Foisy,V Kolagunta,S Veeraraghavan

2007 IEEE International SOI Conference（2007）

引用 6|浏览32

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摘要

We develop, for the first time, a compact and scalable model to account for the poly-space effects (PSEs) in uniaxially-strained etch stop layer (ESL) stressors. The model is based on 2-dimensional (2D) finite element (FEM) stress simulations and 4-point bending characterization of silicon, and agrees well with measured data. The impact of PSEs on circuit performance is also discussed.

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关键词

uniaxially-strained etch stop layer stressors,poly-space effects,two-dimensional finite element stress simulations,2D-FEM,silicon bending characterization,MOSFET,SOI process,compact scalable model,4-point bending characterization

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