A Segmented Gate Driver Ic For The Reduction Of Igbt Collector Current Over-Shoot At Turn-On

In this paper, a segmented IGBT gate driver IC for mitigating IGBT turn-on I-C over-shoot is presented. The proposed IC is fabricated using TSMC's 0.18 mu m BCD Gen-2 process. Unlike existing I-C over-shoot reduction techniques, the proposed technique does not require significant additional external components or an increase in turn-on energy. During turn-on, the gate driver is controlled such that (dV(GE)/dt) is kept low as current is transferred from the FWD to the IGBT and kept high at all other times. The ideal timing of (dV(GE)/dt) transitions could vary between IGBT devices, age, temperature, etc. A feedback system is used to correct for these variances. A 37% reduction in IC overshoot is achieved while maintaining the same E-ON. A 54% reduction in EON is achieved for the same I-C overshoot. Finally, a 15.5 dBm reduction in CEMI is observed when compared to operation with a constant R-OUT and similar E-ON.