permission. Re-architecting DRAM with Monolithically Integrated Silicon Photonics

Proceedings of the 37th International Symposium on Computer Architecture(2013)

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摘要
The move to parallel microprocessors would appear to continue to allow Moore’s Law gains in transistor density to be converted to gains in processing performance. Unfortunately, off-chip memory bandwidths are unlikely to scale in the same way, and could ultimately bottleneck achievable system performance. Current microprocessors are already pushing the pin bandwidth limits of their sockets, and it seems unlikely that the pin bandwidth will increase dramatically without a disruptive technology. The number of signal pins is limited by the area and power required for high-speed signal drivers and package pins. Improving per-pin signaling rates is possible, but only at a significant cost in energy-efficiency, and so will not necessarily improve aggregate off-chip bandwidth. Even if we remove pin bandwidth limitations, memory system performance could be constrained by the energy consumption of other components in current DRAM architectures. Apart from the I/O energy required to send a bit to the CPU, considerable energy is required to traverse the DRAM chip from the memory bank to the I/O pin, and to access the bit within the bank. Most bank access energy is due to the wasteful sensing of bits that are never read out.In this paper, we propose using a monolithically integrated silicon photonics technology to attack all of these issues. Dense wavelength division multiplexing (DWDM) allows for multiple links (wavelengths) to share the same media (fiber or waveguide) for a huge bandwidth density advantage, eliminating pin bandwidth as a constraint. Silicon photonics also demonstrates significantly greater energy efficiency, supporting far larger …
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