Development Of Tilted Hexagonal Platelet Zno Using Atmospheric Pressure Chemical Vapor Deposition And Investigation Of Its Growth Mechanism

APPLIED PHYSICS LETTERS(2012)

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摘要
Large area ZnO films (25 x 25 cm(2)) grown via atmospheric pressure chemical vapor deposition (APCVD) showed unique surface morphologies of tilted hexagonal platelets. In response to the tilt angle change from 50 degrees to 75 degrees, haze values increased from 7% to 25%, indicating that tilt angles directly affected the light-trapping capabilities of films. These unique surfaces were created when H2O oxidizers were used, while powder-like ZnO formed when O-2 or O-3 oxidizers were used. Based on experimental results, corresponding density function theory, and thermodynamic calculations, the initial growth and property of APCVD for ZnO on glass were elucidated. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3681163]
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关键词
chemical vapour deposition, density functional theory, II-VI semiconductors, semiconductor growth, semiconductor thin films, wide band gap semiconductors, zinc compounds
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