Large Reduction In Thermal Conductivity For Ge Quantum Dots Embedded In Sio2 System
APPLIED PHYSICS LETTERS(2012)
摘要
Thermal conductivity (k(T)) of Ge quantum dots (QDs) embedded in SiO2 was investigated at T = 100-400K. The Ge QD/SiO2 system appears to have much lower k(T) than their counterparts of bulk Ge and SiO2, and the reduction factor increases with the surface-to-volume ratio of the QD in SiO2. Attendant to reduced magnitude includes delayed Umklapp decline and weaker dependence on temperature for k(T). Effective medium analysis suggests the reduction in k primarily comes from the decreased group velocity thanks to the QD inclusion that induces interfacial stress on SiO2, phonon confinement, and boundary scatterings. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773204]
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